Electronic transport properties through thiophenes on switchable domains

The electronic transport of electrons and holes through stacks of $\alpha$,\ome ga-dicyano-$\beta$,$\beta$'-dibutyl- quaterthiophene (DCNDBQT) as part of a nov el organic ferroic field-effect transistor (OFFET) is investigated. The novel ap plication of a ferroelectric instead of a dielectric substrate provides the poss ibility to switch bit-wise the ferroelectric domains and to employ the polarizat ion of these domains as a gate field in an organic semiconductor. A device conta ining very thin DCNDBQT films of around 20 nm thickness is intended to be suitab le for logical as well as optical applications. We investigate the device proper ties with the help of a phenomenological model called multilayer organic light-e mitting diodes (MOLED), which was extended to transverse fields. The results sho wed, that space charge and image charge effects play a crucial role in these org anic devices

Optimization of nanostructured permalloy electrodes for a lateral hybrid spin-valve structure

Ferromagnetic electrodes of a lateral semiconductor-based spin-valve structure are designed to provide a maximum of spin-polarized injection current. A single-domain state in remanence is a prerequisite obtained by nanostructuring Permalloy thin film electrodes. Three regimes of aspect ratios $m$ are identified by room temperature magnetic force microscopy: (i) high-aspect ratios of $m \ge 20$ provide the favored remanent single-domain magnetization states, (ii) medium-aspect ratios $m \sim 3$ to $m \sim 20$ yield highly remanent states with closure domains and (iii) low-aspect ratios of $m \le 3$ lead to multi-domain structures. Lateral kinks, introduced to bridge the gap between micro- and macroscale, disturb the uniform magnetization of electrodes with high- and medium-aspect ratios. However, vertical flanks help to maintain a uniformly magnetized state at the ferromagnet-semiconcuctor contact by domain wall pinning.Comment: revised version, major structural changes, figures reorganized,6 pages, 8 figures, revte

Simplified models of electromagnetic and gravitational radiation damping

In previous work the authors analysed the global properties of an approximate model of radiation damping for charged particles. This work is put into context and related to the original motivation of understanding approximations used in the study of gravitational radiation damping. It is examined to what extent the results obtained previously depend on the particular model chosen. Comparisons are made with other models for gravitational and electromagnetic fields. The relation of the kinetic model for which theorems were proved to certain many-particle models with radiation damping is exhibited

Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers

Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance RT (output voltage divided by input current) for different positions of a local gate electrode. The rectifiers are trifurcated quantum wires with straight voltage stem and oblique current-injecting leads. Depending on the gate configuration, thermopower contributions arise from nearly-pinched stem regions which either cancel each other or impose upon the ballistic signal with same or opposite polarity. At best, this enhances RT to a maximum value of 470 Ohm close to threshold voltage

Exponential splitting of bound states in a waveguide with a pair of distant windows

We consider Laplacian in a straight planar strip with Dirichlet boundary which has two Neumann ``windows'' of the same length the centers of which are $2l$ apart, and study the asymptotic behaviour of the discrete spectrum as $l\to\infty$. It is shown that there are pairs of eigenvalues around each isolated eigenvalue of a single-window strip and their distances vanish exponentially in the limit $l\to\infty$. We derive an asymptotic expansion also in the case where a single window gives rise to a threshold resonance which the presence of the other window turns into a single isolated eigenvalue